赝势
电子能带结构
半导体
反射率
相(物质)
电子
空格(标点符号)
凝聚态物理
材料科学
结晶学
化学
物理
光学
光电子学
量子力学
计算机科学
操作系统
作者
Francesco Aymerich,Franco Meloni,G. Mula
标识
DOI:10.1016/0038-1098(79)91045-7
摘要
Abstract Pseudopotential calculations have been carried out for the α, β and γ polytypic forms of the layer semiconductor ZnIn 2 S 4 , respectively, corresponding to space groups C 5 3 v , C 1 3 v and D 3 3 d . The required form factors are consistent with those used in our previous calculations for ZnS and CdIn 2 S 4 . The band structure of the α phase, the only one up to now for which optical data are available, compares quite satisfyingly with very recent photoemission and reflectivity experimental data. The computed band structures of the β and γ phases are very alike; on the contrary, interesting differences exist between these structures and the α phase which could easily be verified by experimental investigations.
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