电负性
密度泛函理论
磁性
凝聚态物理
掺杂剂
铁磁性
兴奋剂
磁矩
自旋极化
电子结构
价(化学)
过渡金属
Atom(片上系统)
材料科学
态密度
感应耦合
化学
计算化学
物理
电子
生物化学
催化作用
有机化学
量子力学
计算机科学
嵌入式系统
作者
Yandong Ma,Ying Dai,Baibiao Huang
标识
DOI:10.1016/j.commatsci.2010.12.025
摘要
The electronic structure of non-transition-metal element (Be, B, C, N, O and F)-doped CdS is studied based on spin-polarized density function theory within the generalized gradient approximation. Our results show that the substitutional Be, B and C for S in CdS induces spin polarized localized states in the gap or near the valence band and generates local magnetic moments 2.0 μB, 3.0 μB and 2.0 μB with one dopant atom, respectively. Whereas doping with N, O and F in CdS does not induce spin polarization. It is found the magnetic states in these systems are related to the difference between the electronegativities of the dopant and the anion in the host. Long-range ferromagnetic coupling may occur in Be, B and C-doped CdS, which can be explained by the p–d exchange-like p–p coupling interaction involving holes.
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