激子
外延
光致发光
材料科学
三元运算
光电子学
凝聚态物理
宽禁带半导体
金属有机气相外延
图层(电子)
纳米技术
物理
计算机科学
程序设计语言
作者
Chris I. Harris,B. Ḿonemar,Hiroshi Amano,Isamu Akasaki
摘要
Results from temperature dependent photoluminescence (PL) transient measurements on metalorganic vapor phase epitaxy grown epitaxial layers of GaN and GaInN are reported. In sufficiently pure GaN layers the free-exciton PL dominates even at the lowest temperatures (2 K), and the intrinsic excitonic lifetimes can be obtained. We report a value of about 125 ps for the radiative lifetime of the free exciton in GaN at 2 K, as obtained from the PL transients of a 3 μm buried undoped GaN layer sandwiched between AlN and GaInN. The PL decay time in the ternary alloy GaInN, which is dominated by localized excitons at low temperatures, is much longer, about 500 ps.
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