Further examination of the Si KLL Auger line in silicon nitride thin films

The chemical bonding of Si in silicon nitride thin films has been studied using XPS. The kinetic energies of the Si KLL and Si LVV lines and the binding energies of the photoelectron lines along with their Auger parameters have been tabulated for sputter deposited, plasma deposited and CVD silicon nitride films. Characteristics of the silicon nitride thin films formed by N+2 bombardment of Si have been discussed. Ar+ bombardment of the silicon nitride films is shown to cause reduction of the Si3N4 with greater amounts at the very near surface. The reduced species seem to be mostly substoichiometric Si3N4 rather than elemental Si. Analysis of the Si KLL line shapes shows variation in the amount of substoichiometric Si3N4 present for some of the silicon nitride films.