3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm<sup>2</sup> and High Avalanche Withstanding Capability

In this paper, newly developed 3300V-class IEMOSFETs were presented. By means of the optimization of current spreading layers (CSLs), we could achieve low specific on-resistance (R ON A) of 11.6mΩcm 2 , while maintaining high blocking voltage (BV DSS ) of 3978V. The R ON A analysis revealed drastic reduction of JFET resistance compared to a MOSFET without a CSL. High ruggedness with the avalanche withstanding energy of 4.6J/cm 2 was achieved by the optimal device design of the edge termination. We could also confirm favorable characteristics of R ON A, BV DSS and threshold voltage (V TH ) at high temperatures up to 200 ○ C, and the fast switching behavior.