光伏系统
碲化镉光电
纳米技术
光伏
新兴技术
太阳能电池
材料科学
工程物理
计算机科学
光电子学
工程类
电气工程
作者
Pabitra K. Nayak,Suhas Mahesh,Henry J. Snaith,David Cahen
标识
DOI:10.1038/s41578-019-0097-0
摘要
The remarkable development in photovoltaic (PV) technologies over the past 5 years calls for a renewed assessment of their performance and potential for future progress. Here, we analyse the progress in cells and modules based on single-crystalline GaAs, Si, GaInP and InP, multicrystalline Si as well as thin films of polycrystalline CdTe and CuInxGa1−xSe2. In addition, we analyse the PV developments of the more recently emerged lead halide perovskites together with notable improvements in sustainable chalcogenides, organic PVs and quantum dots technologies. In addition to power conversion efficiencies, we consider many of the factors that affect power output for each cell type and note improvements in control over the optoelectronic quality of PV-relevant materials and interfaces and the discovery of new material properties. By comparing PV cell parameters across technologies, we appraise how far each technology may progress in the near future. Although accurate or revolutionary developments cannot be predicted, cross-fertilization between technologies often occurs, making achievements in one cell type an indicator of evolutionary developments in others. This knowledge transfer is timely, as the development of metal halide perovskites is helping to unite previously disparate, technology-focused strands of PV research. Nearly all types of solar photovoltaic cells and technologies have developed dramatically, especially in the past 5 years. Here, we critically compare the different types of photovoltaic technologies, analyse the performance of the different cells and appraise possibilities for future technological progress.
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