铁电性
电介质
材料科学
相界
四方晶系
分析化学(期刊)
正交晶系
相(物质)
退火(玻璃)
凝聚态物理
薄膜
结晶学
化学
光电子学
晶体结构
纳米技术
复合材料
物理
有机化学
色谱法
作者
Alireza Kashir,Hyunsang Hwang
出处
期刊:Cornell University - arXiv
日期:2021-02-05
被引量:5
摘要
Recently, based on the phase-field modeling, it was predicted that Hf1-xZrxO2 (HZO) exhibits the morphotropic phase boundary (MPB) in its compositional phase diagram. Here, we investigate the effect of structural changes between tetragonal (t) and orthorhombic (o) phases on the ferroelectric and dielectric properties of HZO films to probe the existence of MPB region. The structural analysis show that by adjusting the ozone dosage during the atomic layer deposition process and annealing conditions, different ratios of t- to o-phases (f_(t/o) ) were achieved which consequently affect the ferroelectric and dielectric properties of the samples. Polarization versus electric field measurements show a remarkable increase in ferroelectric characteristics (Pr and Ec) of the sample that contains the minimum t-phase fraction (f_(t/o)~ 0.04). This sample shows the lowest dielectric constant compared to the other samples which is due to the formation of ferroelectric o-phase. The sample that contains the maximum f_(t/o)~ 0.41 demonstrates the highest dielectric response. By adjusting the f_(t/o), a large dielectric constant of ~ 55 is achieved. Our study reveals a direct relation between f_(t/o) and dielectric constant of HZO thin films which can be understood by considering the density of MPB region.
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