Progress overview of EUV resists status towards high-NA EUV lithography

We investigated how the processing parameters, including post exposure baking (PEB), and resist film thickness (FT) influence the dose and line width roughness (LWR) of different types of EUV resists, targeted for the high-NA EUV lithography. We compared the dose and LWR of molecular, inorganic and CAR resists at half-pitch (HP) of 16 and 14 nm for different PEB temperatures. The results show that without PEB or at lower PEB temperature, resists require higher doses, as expected. We also observed the different behavior of various resist platforms in response to variation of the film thickness. The results showed that there is a room for the optimization of the processing parameters to improve dose and LWR of molecular, inorganic and CAR resists for line/space printing at high resolution.