Growth and preliminary characterization of InAsSb photodiodes for mid-wave infrared detection

This paper reports on the growth details and preliminary characterization of mid-wave infrared radiation InAsSb bariodes. The main device parameters were measured for barrier photodetector heterostructures with three different InAsSb absorber thicknesses: 1 µm (sample no. 1); 1.70 μm (sample no. 2); 2.56 μm (sample no. 3) and one non intentionally doped, 1.70 μm (sample no. 4). The crystallographic structure, responsivity, I-V curves and detectivity characterization were performed.