46.3: Invited Paper: Technologies for scaling wafer diameter up to 300 mm to enable high yield and low cost micro LED production

Cost and yield play a crucial role to make micro LED displays successful. Scaling up wafer diameter is one of the solutions not only because of lower cost per area but also because 200 and 300 mm diameter enable the use of precise and matured Si industry processes for higher yield. However, due to lack of large diameter GaN substrate, hetero‐epitaxy like GaN‐on‐sapphire or GaN‐on‐Si is necessary which causes strain issues because of large lattice and thermal expansion mismatch between GaN and substrate. In this paper, we describe strain issues and solutions of scaling up wafer diameter and demonstrate the latest excellent reproducible uniformity results of GaN‐on‐Si LED epiwafer properties on 200 mm and 300 mm Si substrates as an evidence of overcoming such issues.