Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT Using Trench Structure

薄膜晶体管 沟槽 退火(玻璃) 材料科学 平面的 晶体管 光电子学 频道(广播) 电气工程 计算机科学 纳米技术 复合材料 工程类 电压 计算机图形学(图像) 图层(电子)
作者
Junsung Kim,Do‐Hyung Kim,Seong‐In Cho,Seung Hee Lee,Wooseok Jeong,Sang‐Hee Ko Park
出处
期刊:IEEE Electron Device Letters [Institute of Electrical and Electronics Engineers]
卷期号:42 (12): 1798-1801 被引量:9
标识
DOI:10.1109/led.2021.3125146
摘要

Channel-shortening effect (CSE) in oxide thin film transistors (TFTs) is a crucial issue that must be resolved for applications in ultra-high-resolution displays. One of the origins of the CSE is the diffusion of a shallow donor such as hydrogen from other layers into the channel. In this study, we investigated for the first time the CSE of self-aligned Al-doped In-Sn-Zn-O (Al-ITZO) TFTs with planar and trench structures. The TFTs with planar structures exhibited severe negative $\text{V}_{ {{ON}}}$ shifts after an annealing process, whereas the TFTs with trench structures were barely affected, thereby exhibiting excellent ON/ OFF characteristics. The vertical channel in the trench TFT had higher resistance than the horizontal channel because of a back-sidewall roughness and thin channel. The high resistance of vertical channels played a significant role in determining the ON/ OFF characteristics of Al-ITZO TFT, where $\text{V}_{ {{ON}}}$ remained constant until the diffused shallow donors made the resistive vertical channels become conductive. Based on these unique operation characteristics, the suppression of CSE in a trench TFT was demonstrated even under a high annealing temperature. Trench TFT exhibited higher mobility, higher drain currents, and higher stability than planar TFT, thus making it suitable for ultra-high-resolution displays.
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