锡
氮化钛
材料科学
锆
反应离子刻蚀
钛
铪
氮化物
蚀刻(微加工)
无定形固体
分析化学(期刊)
光电子学
纳米技术
化学
冶金
图层(电子)
结晶学
色谱法
作者
Tom Mauersberger,Jens Trommer,Saurabh Sharma,Martin Knaut,Darius Pohl,Bernd Rellinghaus,Thomas Mikolajick,André Heinzig
标识
DOI:10.1088/1361-6641/ac1827
摘要
Abstract The integration of new materials such as high-k dielectrics or metals into advanced CMOS gate stacks has led to major developments in plasma etching. The authors present a study which is dedicated to the etching of amorphous hafnium zirconium oxide (HZO) and titanium nitride (TiN) layers with Ar/Cl 2 chemistry in one single step. By adjusting the gas ratio and the inductively coupled plasma power, the etching process is shown to have a slow and well controllable etch rate for HZO and TiN. Additionally, a high selectivity between both materials and SiO 2 can be achieved. Gate stack etching was successfully demonstrated and transmission electron microscopy-images revealed good anisotropic etching for HZO and TiN with an etch stop in SiO 2 without damaging the silicon underneath. The process is further applied for the fabrication of metal-ferroelectric-metal capacitors, here TiN-HZO-TiN, and the feasibility of the chosen material combination is proven by electrical characterization. The strategy of using low temperature plasma-enhanced atomic layer deposition for TiN-deposition and forming gas anneal after structuring leads to high remanent polarization-values.
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