Enhancing AC stress stability in amorphous indium gallium zinc oxide thin-film transistors via controlled hydrogen diffusion

To optimize the hydrogen content in a -IGZO TFTs, hafnium oxide (HfO 2 ) passivation via atomic layer deposition (ALD) and subsequent annealing were used. As a result, AC stress stability was improved, reducing the I on degradation rate from 69% to 9%.