空位缺陷
材料科学
纳米技术
纳米光刻
原子单位
硫黄
电化学
薄膜
光电子学
过渡金属
化学物理
制作
结晶学
化学
催化作用
电极
物理化学
冶金
医学
生物化学
替代医学
物理
病理
量子力学
作者
Denis Gentili,Gabriele Calabrese,Eugenio Lunedei,F. Borgatti,Seyed Ariana Mirshokraee,Vasiliki Benekou,Giorgio Tseberlidis,Alessio Mezzi,Fabiola Liscio,Andrea Candini,G. Ruani,Vincenzo Palermo,Francesco Maccherozzi,M. Acciarri,Enrico Berretti,Carlo Santoro,Alessandro Lavacchi,Massimiliano Cavallini
标识
DOI:10.1002/smtd.202401486
摘要
Defects are inherent in transition metal dichalcogenides and significantly affect their chemical and physical properties. In this study, surface defect electrochemical nanopatterning is proposed as a promising method to tune in a controlled manner the electronic and functional properties of defective MoS₂ thin films. Using parallel electrochemical nanolithography, MoS₂ thin films are patterned, creating sulphur vacancy-rich active zones alternated with defect-free regions over a centimetre scale area, with sub-micrometre spatial resolution. The patterned films display tailored optical and electronic properties due to the formation of sulphur vacancy-rich areas. Moreover, the effectiveness of defect nanopatterning in tuning functional properties is demonstrated by studying the electrocatalytic activity for the hydrogen evolution reaction.
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