无杂散动态范围
逐次逼近ADC
动态范围
电子工程
电容感应
放大器
CMOS芯片
功勋
计算机科学
物理
电气工程
工程类
电容器
电压
光电子学
作者
Jae Hyun Chung,Ye-Dam Kim,Chang-Un Park,Kun-Woo Park,Dong-Ryeol Oh,Min-Jae Seo,Seung‐Tak Ryu
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2024-02-08
卷期号:59 (8): 2481-2491
标识
DOI:10.1109/jssc.2024.3360944
摘要
This article presents an energy-efficient high-resolution dual-residue (D-R) pipelined-successive approximation register (SAR) analog-to-digital converter (ADC), with a backend capacitive interpolating SAR ADC incorporated with noise-shaping (NS) capability. The residue amplifier design could be simplified as the residue is pre-amplified by the amplifier for the kT/ $C$ -noise cancellation. Moreover, the proposed segmented digital-to-analog converter (DAC) structure overcomes parasitic capacitance limitations in the capacitive interpolation, improving resolution along with the gain-error-free advantage of the D-R structure. Fabricated in a 180-nm CMOS technology, the prototype ADC achieves an 81.2-dB signal-to-noise and distortion ratio (SNDR) and an 89.9-dB spurious-free dynamic range (SFDR) in a 1.5-MHz bandwidth (BW) at an over-sampling ratio (OSR) of 8 with a 170.4-dB SNDR Schreier figure-of-merit (FoM) without any calibration.
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