铁电性
孤子
材料科学
薄膜
凝聚态物理
物理
纳米技术
光电子学
非线性系统
量子力学
电介质
作者
Maasoomah Sadaf,Saima Arshed,Ghazala Akram,Ali Nabi,Hijaz Ahmad,Sameh Askar
标识
DOI:10.1016/j.rinp.2024.107380
摘要
This study examines the thin-film ferroelectric materials equation via two most efficient and reliable integrating schemes. These schemes include the (G′G,1G)-expansion method and the generalized Kudryashov method. The thin-film ferroelectric materials equation plays a crucial part in physics, optics, and other branches of science. The traveling wave transformation is applied to reduce the governing model into ordinary differential equation. The suggested methods extract hyperbolic, trigonometric and rational function solutions. Constraint conditions for the validity of obtained solutions are also discussed. Moreover, for appropriate parametric values, acquired findings are displayed via contour, 2D and 3D graphics that show the physical relevance and dynamical behavior of the proposed equation.
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