材料科学
量子点
电阻随机存取存储器
数码产品
光电子学
电导
电阻式触摸屏
量子
纳米技术
凝聚态物理
电气工程
电压
量子力学
物理
工程类
作者
Harshit Sharma,Nitish Saini,Ajeet Kumar,Ritu Srivastava
摘要
AgBiS 2 quantum dots-based low-powered and bipolar resistive switching device with filamentary mechanism exhibits controlled multi-quantum conductance levels making it suitable for ultra-high dense memory application.
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