Domain morphology and electro-optic effect in Si-integrated epitaxial BaTiO3 films

Ferroelectric $\mathrm{BaTi}{\mathrm{O}}_{3}$ thin films epitaxially integrated on Si are an emergent platform for fabricating integrated electro-optical modulators using the linear electro-optic effect for applications in silicon photonics. These devices hold great promise for optical neuromorphic and quantum computing. Understanding the domain morphology of such films is essential for building ultrafast, ultralow-power electro-optic modulators. However, the domain morphology of the film is marked by significant complexity and our knowledge of it and its relation to the electro-optic response in epitaxial thin films is limited. In this paper, we use a phase-field model implemented within the finite-element method to map domain morphologies. The corresponding electro-optic response is also discussed.