光电探测器
响应度
异质结
材料科学
光电子学
近红外光谱
红外线的
比探测率
激光器
物理
光学
作者
Yinghao Cui,Yangyang Sun,Chen Wang,Mengxue Lu,Guangzhu Liu,Shirong Chen,Yongqiang Yu
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2023-12-01
卷期号:44 (12): 2011-2014
被引量:1
标识
DOI:10.1109/led.2023.3329495
摘要
Here, we propose and demonstrate a 1T-WS2/Si heterojunction for the high-responsivity near-infrared-II (NIR-II) photodetector by pulsed laser deposition method. The device exhibits an unique NIR photoresponse with a high signal-to-noise ratio of $10^{{2}}\sim 10^{{3}}$ between visible and NIR light through optimization of the 1T-WS2 film thickness. Notably, the responsivities up to 1.02 A/W@1310 nm and ~0.97 A/W@1550 nm at bias voltage of −1 V are achieved, which are superior to those of the previous transition metal chalcogenides/Si heterojunctions but also are comparable to some commercial InGaAs photodetectors in NIR-II region. Moreover, the presented heterojunction can be utilized to realize more accurate heart rate monitoring in photoplethysmogram system.
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