半金属
拓扑绝缘体
物理
迪拉克费米子
布里渊区
Dirac(视频压缩格式)
表面状态
凝聚态物理
拓扑(电路)
点反射
费米能级
电子能带结构
费米子
几何相位
带隙
量子力学
曲面(拓扑)
电子
几何学
数学
组合数学
中微子
作者
Man Li,Wenxin Lv,Ning-Ning Zhao,Chunsheng Gong,Tianlun Yu,Xiaoyang Chen,Minyinan Lei,Alexander Fedorov,Kai Li,B. Büchner,Hechang Lei,Shancai Wang,Rui Lou
出处
期刊:Physical review
日期:2023-11-03
卷期号:108 (20)
标识
DOI:10.1103/physrevb.108.205107
摘要
Spin-orbit coupling (SOC) plays a significant role in the development of topological physics. For example, considering the SOC effect would lead to the formation of a topological insulator with band inversion in a time-reversal symmetry-preserved system and the realization of a Chern phase in a time-reversal symmetry-broken system. Here, by using angle-resolved photoemission spectroscopy combined with first-principles electronic structure calculations, we report SOC-induced ``hidden'' Dirac bands near the Fermi level in the nonsymmorphic topological semimetal InBi. We clearly observe Dirac-like bulk band crossings located at the corner and boundary of the Brillouin zone, providing compelling evidence for three-dimensional Dirac semimetal states. By means of in situ potassium dosing on the crystal surface, we are able to reveal a partial Dirac nodal line along the ${k}_{z}$ direction formed by Dirac fermions close to the Fermi level. Our results not only demonstrate the rich topological states in InBi but also offer a good platform for engineering topologically nontrivial phases.
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