材料科学
光电子学
太赫兹辐射
兴奋剂
光电导性
飞秒
分子束外延
蓝宝石
外延
激光器
光学
纳米技术
物理
图层(电子)
作者
E. A. Klimov,А. Н. Клочков,P. M. Solyankin,С. С. Пушкарев,Г. Б. Галиев,Nataliya Yuzeeva,A. P. Shkurinov
出处
期刊:International Journal of Modern Physics B
[World Scientific]
日期:2023-10-09
标识
DOI:10.1142/s0217979224503788
摘要
In this study we investigate a relatively new material for terahertz (THz) photoconductive antennas (PCAs): GaAs epitaxial films grown on (111)A-oriented semi-insulated GaAs substrates and doped with Si. GaAs:Si (111)A films with the required high resistance without postgrowth annealing have been grown by molecular-beam epitaxy. The Si doping of (111)A-oriented GaAs was expected to lead to the formation of acceptors that facilitate the activation of As[Formula: see text] traps. The relaxation times of nonequilibrium charge carriers in the films were measured in pump-probe experiment, and, finally, the electron mobility was estimated from the carrier lifetime and current–voltage characteristics measured under pulsed pumping by Ti:sapphire femtosecond laser. Dipole and bow-tie PCAs were fabricated, and the THz emission spectra and the total THz emission power were measured with varying applied voltage and optical excitation power. The properties of GaAs:Si (111)A films and the PCAs based on them are compared with LTG-GaAs (100) and (111)A-oriented films.
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