钝化
材料科学
光电二极管
钙钛矿(结构)
光电探测器
光探测
量子点
红外线的
光电子学
带隙
纳米技术
光学
化学工程
图层(电子)
物理
工程类
作者
Duo Chen,Yuxuan Liu,Bing Xia,Long Chen,Yang Yang,Gaoyuan Yang,Jing Liu,Shuaicheng Lu,Ciyu Ge,Peilin Liu,Junrui Yang,Guijie Liang,Xinzheng Lan,Xiangbin Zeng,Luying Li,Jianbing Zhang,Zewen Xiao,Liang Gao,Jiang Tang
标识
DOI:10.1002/adfm.202210158
摘要
Abstract Solution‐processed PbS colloidal quantum dots (CQDs) are promising optoelectronic materials for next‐generation infrared imagers due to their monolithic integratability with silicon readout circuit and tunable bandgap controlled by CQDs size. However, large‐size PbS CQDs (diameter >4 nm) for longer shortwave‐infrared photodetection consist mainly of {100} facets with incomplete surface passivation and unsatisfied stability. Here, it is reported that perovskite‐bridged PbS CQDs, in which the {100} facets of the CQDs are epitaxially bridged with CsPbI 3– x Br x perovskite, can achieve improved passivation and enhanced stability in comparison with the traditional strategies. The resultant infrared CQDs photodiodes exhibit significantly reduced dark current, nearly 50% enhanced photoresponse, and improved work stability. These superior properties synergistically produce the most balanced performance (with a high −3 dB bandwidth of 42 kHz and an impressive specific detectivity of 6.2 × 10 12 Jones) among the reported CQDs photodetectors.
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