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Heterogenous integration of gallium oxide with diamond and SiC

钻石 氧化镓 材料科学 氧化物 光电子学 冶金
作者
Arpit Nandi,Indraneel Sanyal,Alexander Petkov,James W. Pomeroy,D. Cherns,Martin Kuball
标识
DOI:10.1117/12.3013691
摘要

Gallium Oxide (Ga2O3) has attracted great attention due to its predicted high critical electric field, and consequentially its expectation to have impact for high voltage power devices. However, from a device design and reliability perspective, it has certain drawbacks: Ga2O3 has a relatively low thermal conductivity, potentially causing excessively high device temperatures, accelerating device degradation; usable p-doping is unavailable, preventing the use of advanced devices designs such as superjunctions which require both n- and p-doping. It is critically important to address these limitations for Ga2O3 to compete with SiC which is Ga2O3's direct competitor, where advanced device concepts such as superjunctions are in process being explored, and prototype devices have already been realized. For Ga2O3, one possible solution is heterogeneous integration with other wide or ultra-wide bandgap materials which can be p-doped. Selecting materials with higher thermal conductivity would also address thermal management. Nickel Oxide has been explored as a p-type material and successful Gallium Oxide / Nickel Oxide high voltage proto-type devices have been demonstrated. However, Nickel Oxide's has a low thermal conductivity, so enabling devices which can handle high current densities may be a challenge. Based on these criteria, diamond and SiC are primary candidates for integration with Ga2O3. We report here on integration by metal organic chemical vapor deposition (MOCVD) of Ga2O3 with diamond and SiC. We also explore direct bonding as an alternative heterogenous integration method.
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