材料科学
碳化硅
跨导
氧化物
阈值电压
辐照
光电子学
场效应晶体管
吸收剂量
晶体管
电离辐射
分析化学(期刊)
半导体
化学
电气工程
电压
物理
色谱法
核物理学
冶金
工程类
作者
Xiaojuan Pu,Ying Wei,Xiaolong Li,Haonan Feng,Xiaowen Liang,Jie Feng,Jing Sun,Xue‐Feng Yu,Qi Guo
出处
期刊:Journal of Nanoelectronics and Optoelectronics
[American Scientific Publishers]
日期:2022-05-01
卷期号:17 (5): 809-813
被引量:1
标识
DOI:10.1166/jno.2022.3254
摘要
The total ionizing dose (TID) radiation effect of silicon carbide metal oxide semiconductor field-effect transistors (SiC MOSFETs) was investigated at different dose rates. The influence of irradiation dose rate on the transfer characteristic curves of the devices was investigated. And the threshold voltage, oxide trap charge, interface state, and peak transconductance et al. were further extracted based on the transfer curve. The results show that the degradation degree of irradiated devices varies at different dose rates due to the different factors. The degradation of the device at high dose rate is due to the radiation-induced oxide trap charge in the gate oxide layer, while the reason of the degradation at low dose rate is the radiation-induced oxide trap charges and interface state simultaneously, which have opposite effects on the devices, and the degradation degree depends on the competition between the two.
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