材料科学
凝聚态物理
霍尔效应
自旋霍尔效应
溅射
磁化
拓扑绝缘体
合金
薄膜
半金属
光电子学
硅
电阻率和电导率
自旋极化
纳米技术
冶金
物理
磁场
量子力学
电子
作者
Takanori Shirokura,Pham Nam Hai
出处
期刊:AIP Advances
[American Institute of Physics]
日期:2022-12-01
卷期号:12 (12)
被引量:6
摘要
Half-Heusler alloy topological semimetal YPtBi is a promising candidate for an efficient spin source material having both large spin Hall angle θSH and high thermal stability. However, high-quality YPtBi thin films with low bulk carrier density are usually grown at 600 °C, which exceeds the limitation of 400 °C for back end of line (BEOL) process. Here, we investigate the crystallinity and spin Hall effect of YPtBi thin films grown at lower growth temperature down to 300 °C. Although both effective spin Hall angle and spin Hall conductivity degraded with lowering the growth temperature to 300 °C due to degradation of the interfacial spin transparency, they were recovered by reducing the sputtering Ar gas pressure. We achieved a giant θSH up to 7.8 and demonstrated efficient spin–orbit torque magnetization switching by ultralow current density of ∼105 A/cm2 in YPtBi grown at 300 °C with the Ar gas pressure of 1 Pa. Our results provide the recipe to achieve giant θSH in YPtBi grown at lower growth temperature suitable for BEOL process.
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