欧姆接触
肖特基势垒
材料科学
量子隧道
肖特基二极管
光电子学
金属半导体结
电子线路
费米能级
凝聚态物理
单层
纳米技术
物理
量子力学
二极管
图层(电子)
电子
作者
Peng‐Fei Hou,Jingyi Liu,Jin Di,Yumiao Tian,Xiaochun Liu,Yu Xie,Fei Du,Yury Gogotsi,Aleksandra Vojvodić,Xing Meng
出处
期刊:2D materials
[IOP Publishing]
日期:2022-09-09
卷期号:9 (4): 045022-045022
被引量:6
标识
DOI:10.1088/2053-1583/ac8c9f
摘要
Abstract Based on first-principles calculations and quantum transport simulations, we systematically investigate the possibility of using two-dimensional transition metal borides (MBenes) as electrodes for two-dimensional monolayer MoS 2 via interfacial interactions, band bending, vertical Schottky barrier, tunneling probability, and lateral Schottky barrier. The weak interaction between the functionalized MBenes and MoS 2 results in MoS 2 retaining its original intrinsic properties while significantly reducing the Fermi level pinning effect; this, is perfectly consistent with the revised Schottky–Mott model after considering charge redistribution. Combined with band calculations and device local projection density of states, MoS 2 /TiBO, MoS 2 /TiBF, and MoS 2 /MoBO, either with the vertical hole Schottky barrier or the lateral hole Schottky barrier, are negative, forming p-type ohmic contacts. Our work provides theoretical guidance for constructing high-performance nanodevices and MoS 2 -based logic circuits for large-scale integrated circuits. We demonstrate the outstanding potential of MBenes as electrodes for nanodevices.
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