二极管
浪涌
光电子学
调制(音乐)
氮化镓
材料科学
电导率
宽禁带半导体
PIN二极管
物理
纳米技术
气象学
声学
量子力学
图层(电子)
作者
Jiahong Du,Shu Yang,Guangwei Xu,Shibing Long
标识
DOI:10.1109/ispsd57135.2023.10147664
摘要
In this work, we investigate the surge current ruggedness and role of the conductivity modulation in the vertical GaN-on-GaN PiN diode. With varying $t_{\text{surge}}$ (5 µs~10 ms) and [peak Up to 10 kA/cm 2 , the evolvement of surge current capability of vertical GaN-on-GaN PiN diode has been systematically investigated. Owing to the desirable photon- and thermally-enhanced conductivity modulation in the direct-bandgap GaN, a high surge energy density of $282 J/cm^{2}$ has been realized in the vertical GaN-on-GaN PiN diode, showing great potential of vertical GaN-on-GaN PiN diodes for high power electronic applications.
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