Machine Learning-based model for Single Event Upset Current Prediction in 14nm FinFETs

计算机科学 人工神经网络 机器学习 随机森林 事件(粒子物理) 灵敏度(控制系统) 单事件翻转 试验装置 人工智能 电子工程 计算机工程 工程类 静态随机存取存储器 量子力学 物理
作者
V Vibhu,Sparsh Mittal,Vivek Kumar
标识
DOI:10.1109/vlsid57277.2023.00048
摘要

This work presents a machine learning regression-based surrogate model of Single Event Upset (SEU) transient current for circuit-level simulation. The phenomenal success of FinFET technology in terms of integration and performance over planar MOSFETs has paved the way for their usage in aerospace-integrated circuits and defense applications. However, their sensitivity to radiation hazards in such applications remains the primary concern. With the recent technological advancement, the semiconductor industry has shifted its focus to device analysis before fabrication so that the circuit designers may mitigate radiation effects before actual fabrication. The Technology Computer-Aided Design (TCAD) tools are being used to design the structure and analyze the device parameters. However, these tools are computationally intensive and time-consuming. This work explores the feasibility of using machine learning for predicting device parameters and Single Event Transient (SET) current using an unsupervised learning technique. A 14nm 3D FinFET device is designed using the TCAD tool, and a dataset with various parameters is generated. This dataset is used to train (1) a Random Forest Regressor model and (2) A feedforward neural network for predicting SET pulse current. The 10% dataset was randomly chosen as a subset to test this algorithm and predict SET current. The comparison between actual and predicted data shows high accuracy. For example, the random forest algorithm achieves a mean square error of 1.49e-3 for the test dataset. This shows that machine learning models can replace TCAD for accelerating device performance analysis for large-scale circuits. The conventional TCAD simulation takes 4 hours per simulation on a Xeon W1350P processor and 32 GB RAM hardware. By contrast, our proposed model takes only 8–10 seconds to predict the SET current. This study can help designers mitigate SET effects in the design phase. The source-code of our proposed machine-learning models is available at https://github.com/vihhu53/MLSEUFinfet.

科研通智能强力驱动
Strongly Powered by AbleSci AI
科研通是完全免费的文献互助平台,具备全网最快的应助速度,最高的求助完成率。 对每一个文献求助,科研通都将尽心尽力,给求助人一个满意的交代。
实时播报
学术蝗虫完成签到,获得积分10
刚刚
刚刚
艾瑞克完成签到,获得积分10
刚刚
2秒前
2秒前
3秒前
小丑鱼儿完成签到 ,获得积分10
5秒前
lucky_xian发布了新的文献求助10
5秒前
华仔应助AcA采纳,获得10
5秒前
6秒前
春花完成签到 ,获得积分10
7秒前
alzcor完成签到 ,获得积分10
7秒前
7秒前
红豆大王完成签到,获得积分10
8秒前
小卜同学发布了新的文献求助10
9秒前
欧冶冶发布了新的文献求助200
9秒前
wend完成签到 ,获得积分10
10秒前
之之完成签到,获得积分10
10秒前
星之殇完成签到,获得积分10
10秒前
Brilliant发布了新的文献求助10
11秒前
11秒前
20240901完成签到,获得积分10
12秒前
猪猪完成签到,获得积分10
13秒前
zz完成签到,获得积分10
13秒前
淡然凌青完成签到 ,获得积分10
15秒前
ysww完成签到,获得积分10
15秒前
fuguier完成签到,获得积分10
15秒前
刘钱美子完成签到,获得积分10
15秒前
memory应助明理的以亦采纳,获得10
15秒前
开朗清涟完成签到,获得积分10
16秒前
zhangwenjie完成签到 ,获得积分10
17秒前
系统提示发布了新的文献求助10
17秒前
QAQ77完成签到,获得积分10
18秒前
rover完成签到,获得积分10
18秒前
科研通AI6.2应助DungHoang采纳,获得10
19秒前
20秒前
森莫莓完成签到,获得积分10
20秒前
欧冶冶完成签到,获得积分10
21秒前
利妥昔单抗n完成签到,获得积分10
21秒前
wwwteng呀完成签到,获得积分10
22秒前
高分求助中
(应助此贴封号)【重要!!请各用户(尤其是新用户)详细阅读】【科研通的精品贴汇总】 10000
Development Across Adulthood 800
Chemistry and Physics of Carbon Volume 18 800
The Organometallic Chemistry of the Transition Metals 800
The formation of Australian attitudes towards China, 1918-1941 640
Signals, Systems, and Signal Processing 610
天津市智库成果选编 600
热门求助领域 (近24小时)
化学 材料科学 医学 生物 纳米技术 工程类 有机化学 化学工程 生物化学 计算机科学 物理 内科学 复合材料 催化作用 物理化学 光电子学 电极 细胞生物学 基因 无机化学
热门帖子
关注 科研通微信公众号,转发送积分 6444873
求助须知:如何正确求助?哪些是违规求助? 8258696
关于积分的说明 17592214
捐赠科研通 5504599
什么是DOI,文献DOI怎么找? 2901598
邀请新用户注册赠送积分活动 1878587
关于科研通互助平台的介绍 1718214