整改
肖特基二极管
材料科学
二极管
碳纳米管
肖特基势垒
光电子学
电接点
泄漏(经济)
纳米技术
电气工程
电压
经济
宏观经济学
工程类
作者
Mark Hughes,K. P. Homewood,Richard J. Curry,Yutaka Ohno,T. Mizutani
摘要
A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I0) of 6 × 10−16 A, and an ideality factor (η) of 1.38. When the gate above the Ti contact is biased negatively the diode inverts. When positive bias is then applied to the gate above the Pd contact minority carrier injection is suppressed. Configured such I0 and η were 2 × 10−14 A and 2.01, respectively. Electrical characterization indicates that the Schottky barrier height for electrons is lower for the Pd contact than the Ti contact.
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