带偏移量
工作职能
材料科学
静电学
半导体
光电子学
电介质
偶极子
氧化物
单层
电子能带结构
偏移量(计算机科学)
薄膜
金属
工作(物理)
图层(电子)
凝聚态物理
纳米技术
带隙
化学
价带
计算机科学
工程类
物理化学
物理
有机化学
冶金
机械工程
程序设计语言
作者
Lior Kornblum,B. Meyler,J. Salzman,M. Eizenberg
摘要
Thin dielectric layers are a prominent route to control the band alignments and effective work function of metal oxide semiconductor (MOS) devices. In this work, the electrostatic effects of thin Ta2O5 layers on the band alignments of MOS devices are examined. A detailed analysis of the physical properties of a thick (∼6 nm) Ta2O5 layer is reported. No significant dipoles at Ta2O5-Al2O3 and Ta2O5-SiO2 interfaces are found, as well as any significant charges inside Ta2O5 layers. When positioned at the interface, Ta2O5 is shown to prevent the formation of band offsets between Al2O3-SiO2, resulting in a shift of 1 ± 0.2 eV versus samples without interfacial Ta2O5. The relatively large magnitude of this shift in the current experimental configuration compared to previous works may indicate the participation of interface charges in the band offset. The possible use for these effects in devices is discussed.
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