Defect structure and transport properties of manganous sulphide

Abstract It has been shown that above 800 K manganous sulphide demonstrates a simple defect structure which can be described in terms of a point defect model. Over the major part of the phase field of MnS the predominant defects are doubly ionized cation vacancies and electron holes (Mn1−yS) while near and at the Mn/MnS phase boundary doubly ionized interstitial cations and quasi-free electrons predominate (Mn1+yS). In the intermediate range intrinsic ionic defects predominate at lower temperatures and intrinsic electronic disorder prevails at higher temperatures.