电压门控离子通道
电压门控钾通道
机制(生物学)
电生理学
钾通道
电压
作者
Morten Ø. Jensen,Vishwanath Jogini,David W. Borhani,Abba E. Leffler,Ron O. Dror,David E. Shaw
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:2012-04-13
卷期号:336 (6078): 229-233
被引量:441
标识
DOI:10.1126/science.1216533
摘要
The mechanism of ion channel voltage gating-how channels open and close in response to voltage changes-has been debated since Hodgkin and Huxley's seminal discovery that the crux of nerve conduction is ion flow across cellular membranes. Using all-atom molecular dynamics simulations, we show how a voltage-gated potassium channel (KV) switches between activated and deactivated states. On deactivation, pore hydrophobic collapse rapidly halts ion flow. Subsequent voltage-sensing domain (VSD) relaxation, including inward, 15-angstrom S4-helix motion, completes the transition. On activation, outward S4 motion tightens the VSD-pore linker, perturbing linker-S6-helix packing. Fluctuations allow water, then potassium ions, to reenter the pore; linker-S6 repacking stabilizes the open pore. We propose a mechanistic model for the sodium/potassium/calcium voltage-gated ion channel superfamily that reconciles apparently conflicting experimental data.
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