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计算机科学
万维网
情报检索
工程物理
物理
程序设计语言
作者
Hyung Sup Yoon,Chul Soon Park,Sin‐Chong Park
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:1986-11-01
卷期号:4 (6): 3095-3100
被引量:15
摘要
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Hyung Sup Yoon, Chul Soon Park, Sin‐Chong Park; Structure and electrical resistivity of low pressure chemical vapor deposited silicon. J. Vac. Sci. Technol. A 1 November 1986; 4 (6): 3095–3100. https://doi.org/10.1116/1.573635 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAVS: Science & Technology of Materials Interfaces and ProcessingJournal of Vacuum Science & Technology A Search Advanced Search |Citation Search
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