Plasma cleaning and the removal of carbon from metal surfaces

Abstract In an investigation of the plasma cleaning of metals and the plasma etching of carbon, a mass spectrometer was used as a sensitive process monitor. CO2 produced by the plasma oxidation of carbon films or of organic contamination and occluded carbon at the surfaces of metals proved to be the most suitable gas to monitor. A good correlation was obtained between the measured etch rate of carbon and the resulting CO2 partial pressure monitored continuously with the mass spectrometer. The rate of etching of carbon in an oxygen-argon plasma at 0.1 Torr was high when the carbon was at cathode potential and low when it was electrically isolated in the plasma, thus confirming the findings of previous workers and indicating the importance of ion bombardment in the etching process. Superficial organic contamination on the surfaces of the metals aluminium and copper and of the alloy Inconel 625 was quickly removed by the oxygen-argon plasma when the metal was electrically isolated and also when it was at cathode potential. Occluded carbon (or carbides) at or near the surfaces of the metals was removed slowly and only when the metal was at cathode potential, thus illustrating again the importance of ion bombardment.