材料科学
有效质量(弹簧-质量系统)
碲化物
凝聚态物理
各向异性
四方晶系
电子结构
费米能级
铟
光电发射光谱学
晶体结构
结晶学
物理
X射线光电子能谱
核磁共振
光学
光电子学
化学
量子力学
冶金
电子
作者
Geoffroy Kremer,Aymen Mahmoudi,Meryem Bouaziz,Cléophanie Brochard-Richard,Lama Khalil,Debora Pierucci,F. Bertran,P. Le Fèvre,Mathieu G. Silly,Julien Chaste,Fabrice Oehler,Marco G. Pala,F. Bisti,Abdelkarim Ouerghi
出处
期刊:Physical Review Materials
[American Physical Society]
日期:2023-07-11
卷期号:7 (7)
标识
DOI:10.1103/physrevmaterials.7.074601
摘要
Metal monochalcogenides $(MX,$ $M=\mathrm{Ga}, \mathrm{In}; X=\mathrm{S}, \mathrm{Se}, \mathrm{Te})$ offer a large variety of electronic properties depending on chemical composition, number of layers, and stacking order. InTe material has a one-dimensional chain structure, from which intriguing properties arise. Precise experimental determination of the electronic structure of InTe is needed for a better understanding of potential properties and device applications. In this study, by combining angle-resolved photoemission spectroscopy and density functional theory calculations, we demonstrate the stability of InTe in the tetragonal crystal structure, with a semiconducting character and an intrinsic $p$-type doping. The valence band maximum results in being located at the high symmetric $M$ point with a high elliptical valley, manifesting a large effective mass close to the Fermi level. The longitudinal and transverse effective masses of the $M$ valley are measured as 0.2 ${m}_{0}$ and 2 ${m}_{0}$, respectively. More specifically, we observe that the effective mass of the hole carriers is about ten times larger along the chain direction compared to the perpendicular one. Remarkably, the in-plane anisotropy of effective mass from the experiment and in theoretical calculations are in good agreement. These observations indicate a highly anisotropic character of the electronic band structure, making InTe of interest for electronic and thermoelectric applications.
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