Performance enhancement of Sb2Se3-based solar cell with IGZO and n-ZnO as electron transport layers

Prototype of Antimony Selenide (Sb 2 Se 3 ) solar cell having different electron transport layer (ETL) has been stimulated by solar cell capacitance simulator (SCAPS). The impact of two individual ETL layers i.e. Indium Gallium Zinc Oxide (IGZO) and n-type Zinc Oxide (n-ZnO) has been analysed and it is found that n-ZnO is best for ETL. n-ZnO, Sb 2 Se 3 , and CuO layers in a newly proposed structure have respective thicknesses of 50 nm, 300 nm, and 20 nm. To achieve the optimum performance of this prototype the acceptor concentration of CuO is taken as 10 18 cm −2 and the donor concentration of n-ZnO is taken as 10 20 cm −2 . The defect density at Sb 2 Se 3 and Sb 2 Se 3 /n-ZnO is taken as 10 13 cm −2 and 10 10 cm −2 . It plays a crucial part in device performance. With the optimized structure, we get maximum power conversion efficiency (PCE) up to 31.72% (V OC =1.148 volts, J SC =48.30 mA/cm 2 & FF=88.50%) with n-ZnO as an ETL layer. For effective results, defect density at both interfaces are taken 10 9 cm −2 , and maximum efficiency is achieved. Numerical analysis of proposed structure has done and study of various parameters like thickness variation at absorber layer, series resistance and temperature variation, defect density, metal function, and interface density variation.