High‐Performance Self‐Powered Deep Ultraviolet Photodetector Based on NiO/β‐Ga2O3 Heterojunction with High Responsivity and Selectivity

A high‐performance self‐powered deep ultraviolet (DUV) photodetector based on the NiO/β‐Ga 2 O 3 heterojunction is fabricated and analyzed. The NiO/β‐Ga 2 O 3 heterojunction photodetectors are fabricated both with and without a post‐annealing process following NiO film deposition. Each photodetector structure is investigated through technology computer‐aided design simulations, including energy band diagram, trap density, and carrier concentration. The pristine self‐powered NiO/β‐Ga 2 O 3 photodetector, lacking a post‐annealing process, exhibits partial Schottky contact formation between metal and NiO film, leading to performance degradation, including reduced responsivity, detectivity, and response time. On the other hand, the post‐annealed self‐powered NiO/β‐Ga 2 O 3 photodetector demonstrates high performance such as a responsivity of 592.0 mA W −1 , a detectivity of 4.30 × 10 12 Jones, and response times of 30.93 ms and 72.32 ms, respectively. Therefore, the fabricated NiO/β‐Ga 2 O 3 photodetector shows a promising potential for various applications requiring DUV detection without an external voltage bias.