氮化硅
材料科学
分析化学(期刊)
氮化物
化学气相沉积
钝化
硅
等离子体增强化学气相沉积
氢
傅里叶变换红外光谱
氢键
纳米技术
氮气
无定形固体
化学键
化学工程
光电子学
结晶学
化学
工程类
有机化学
分子
图层(电子)
作者
Hasnain Yousuf,Alamgeer Khan,Muhammad Quddamah Khokhar,Rafi Ur Rahman,Polgampola Chamani Madara,Jaljalalul Abedin Jony,Muhammad Aleem Zahid,Youngkuk Kim,Junsin Yi
标识
DOI:10.1002/ente.202400761
摘要
The deposition of amorphous hydrogenated silicon nitride (a‐SiN x :H) via plasma‐enhanced chemical vapor deposition is critical for optimizing the performance of crystalline silicon (c‐Si) solar cells. This study investigates the impact of varying gas ratios (GR = NH 3 /SiH 4 ) on the optical and physical properties of deposited SiN x films. Results show that the refractive index (RI) ranges from 1.8 to 2.3 with changing gas compositions. Fourier transform infrared Spectroscopy reveals shifts in [SiNH] and [SiH] stretching modes, indicating changes in hydrogen passivation and nitrogen incorporation. Hydrogen bonding densities of [SiH] and [SiNH] correlate positively with the RI. For example, the hydrogen bonding density [N H ] ranges from 4.53 × 10 23 to 6.32 × 10 23 cm −3 for [SiNH] bonds while [Si‐H] varies from 6.93 × 10 23 to 1.06 × 10 24 cm −3 . Secondary ion mass spectrometry (SIMS) analysis shows stable hydrogen intensity, contrasting with a decrease in nitrogenhydrogen bonds. These findings highlight the key role of hydrogen bonding in determining SiN x film properties, with significant implications for semiconductor and photovoltaic applications.
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