材料科学
硅
串联
钙钛矿(结构)
能量转换效率
光电子学
量子点太阳电池
纳米技术
工程物理
单晶硅
化学工程
复合材料
工程类
作者
Angelika Harter,Kerem Artuk,Florian Mathies,Orestis Karalis,Hannes Hempel,Amran Al-Ashouri,Steve Albrecht,Rutger Schlatmann,Christophe Ballif,Bernd Stannowski,Christian Wolff
标识
DOI:10.1021/acsami.4c09264
摘要
In perovskite/silicon tandem solar cells, the utilization of silicon heterojunction (SHJ) solar cells as bottom cells is one of the most promising concepts. Here, we present optimization strategies for the top cell processing and their integration into SHJ bottom cells based on industrial Czochralski (Cz)-Si wafers of 140 μm thickness. We show that combining the self-assembled monolayer [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz) with an additional phosphonic acid (PA) with different functional groups, can improve film formation when used as a hole transport layer improving wettability, minimizing shunt fraction and reducing nonradiative losses at the buried interface. Transient surface photovoltage and transient photoluminescence measurements confirm that the combined Me-4PACz/PA layer has similar charge transport properties to Me-4PACz alone. Moreover, this work demonstrates the potential for thin, double-side submicron-sized textured industry-relevant silicon bottom cells yielding a high accumulated short-circuit current density of 40.2 mA/cm2 and reaching a stabilized power conversion efficiency of >30%. This work paves the way toward industry-compatible, highly efficient tandem cells based on a production-compatible SHJ bottom cell.
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