材料科学
神经形态工程学
热离子发射
光电子学
电极
无定形固体
放松(心理学)
电阻随机存取存储器
热传导
表面粗糙度
氧化物
记忆电阻器
纳米技术
电子工程
电子
复合材料
计算机科学
化学
心理学
社会心理学
物理化学
冶金
物理
有机化学
量子力学
机器学习
人工神经网络
工程类
作者
G. R. Haripriya,Hee Yeon Noh,Chan-Kang Lee,June-Seo Kim,Myung‐Jae Lee,Hyunjun Lee
出处
期刊:Nanoscale
[The Royal Society of Chemistry]
日期:2023-01-01
卷期号:15 (35): 14476-14487
被引量:6
摘要
The analog resistive switching properties of amorphous InGaZnOx (a-IGZO)-based devices with Al as the top and bottom electrodes and an Al-Ox interface layer inserted on the bottom electrode are presented here. The influence of the electrode deposition rate on the surface roughness was established and proposed as the cause of the observed unusual anomalous switching effects. The DC electrical characterization of the optimized Al/a-IGZO/AlOx/Al devices revealed an analog resistive switching with a satisfactory value for retention levels, but the endurance was found to decrease after 200 cycles. The predominant conduction mechanism in these devices was found to be thermionic emission. An in-depth analysis was performed to explore the relaxation kinetics of the device and it was found that the current has a lower decay rate. The current level stability was tested and found reliable even after 5 h. The cost-effective and precious metal-free nature of the a-IGZO memristor investigated in this study makes it a highly desirable candidate for neuromorphic computing applications.
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