材料科学
偶极子
半导体
三元运算
光电子学
接受者
费米能级
吸收(声学)
凝聚态物理
化学
物理
量子力学
计算机科学
程序设计语言
有机化学
复合材料
电子
作者
Yuemei Li,Quan Liu,Sheng Dai,Chaoming Liu,Yue Liu,Zhiyin Sun,Hui Li,Changjin Zhang,Han Wang,Cheng‐Yan Xu,Wen‐Zhu Shao,Alfred J. Meixner,Dai Zhang,Yang Li,Liang Zhen
出处
期刊:Small
[Wiley]
日期:2023-10-05
卷期号:20 (7)
标识
DOI:10.1002/smll.202305658
摘要
Abstract Defect engineering is promising to tailor the physical properties of 2D semiconductors for function‐oriented electronics and optoelectronics. Compared with the extensively studied 2D binary materials, the origin of defects and their influence on physical properties of 2D ternary semiconductors are not clarified. Here, the effect of defects on the electronic structure and optical properties of few‐layer hexagonal Znln 2 S 4 is thoroughly studied via versatile spectroscopic tools in combination with theoretical calculations. It is demonstrated that the Zn–In antistructural defects induce the formation of a series of donor and acceptor energy levels and sulfur vacancies induce donor energy levels, leading to rich recombination paths for defect emission and extrinsic absorption. Impressively, the emission of donor–acceptor pair in Znln 2 S 4 can be significantly tailored by electrostatic gating due to efficient tunability of Fermi level ( E f ). Furthermore, the layer‐dependent dipole orientation of defect emission in Znln 2 S 4 is directly revealed by back focal plane imagining, where it presents obviously in‐plane dipole orientation within a dozen‐layer thickness of Znln 2 S 4 . These unique features of defects in Znln 2 S 4 including extrinsic absorption, rich recombination paths, gate tunability, and in‐plane dipole orientation are definitely a benefit to the advanced orientation‐functional optoelectronic applications.
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