Comparative Analysis of Phase Leg Voltage Drop Characteristics according to GaN HEMT Type in Short Circuit Condition

This paper compares and analyzes the voltage drop characteristics that occur in the event of a short circuit depending on the type of GaN HEMT power semiconductor with a phase leg voltage detection method. E-mode GaN HEMT and Cascode GaN HEMT are used as comparative samples, and characteristics are compared through LTspice simulation and experimentation. The analysis confirms that E-mode GaN HEMT results in a larger phase leg voltage drop, and demonstrates that the type of GaN HEMT power semiconductor should be considered when designing a short-circuit detection system with a phase leg voltage detection method.