Self-powered high-performance photo and thermal detectors based on the transverse thermoelectric effect of the inclined La-doped BiCuSeO films

Transverse thermoelectric (TTE) effect of the inclined thin films has attracted great attention owing to the application in self-powered photo and thermal detectors. Here, we report the significant enhancement of TTE performance of the inclined BiCuSeO thin films via La doping. The maximum voltage sensitivity of the La-doped BiCuSeO TTE detector reaches about 15.7 V/mJ under the ultraviolet pulsed laser irradiation, which is more than 17 times larger than that of the intrinsic BiCuSeO thin film. Besides, the detector also exhibits good linearity, long-term stability, ultra-broad spectral detection ability as well as the excellent thermal detection performance, with the voltage sensitivity is much higher than that of commercial Gordon gauge. The results show that La doping can effectively improve the TTE performance of the inclined BiCuSeO thin films, which has a prospect and potential application in self-powered high-performance photo and thermal detectors.