Lanthanide doped semiconductor thin films for photonic and optoelectronic applications
兴奋剂
光电子学
材料科学
光子学
半导体
薄膜
镧系元素
纳米技术
物理
离子
量子力学
作者
Jiawen Wang,Lihui Huang,Shenghuang Lin,Shiqing Xu,Gongxun Bai
出处
期刊:Applied physics reviews [American Institute of Physics] 日期:2025-01-24卷期号:12 (1)
标识
DOI:10.1063/5.0220910
摘要
High-performing semiconductor thin films are crucial components in today's electronic age, finding extensive applications in devices and chips. Recently, there has been a significant trend toward incorporating lanthanide elements into these films, primarily driven by the escalating demand for photonic and optoelectronic applications. The featured article presents a detailed overview of the latest research advancements in lanthanide-doped semiconductor thin films tailored for photonic and optoelectronic uses. This comprehensive review encompasses the principles, design considerations, fabrication methods, and characterization techniques involved in creating these doped films. The semiconductors discuss span a range of materials, including wide bandgap semiconductors, perovskites, two-dimensional materials, piezoelectric materials, and organic materials. The article further explores the photonic and optoelectronic applications of these doped films. Finally, it delves into the current challenges, potential solutions, future prospects, and research gaps that need to be addressed in this exciting field.