A self-biased GaN LNA with 30 dB gain and 21 dBm P1dB for 5G communications

Abstract We present a self-biased three-stage GaN-based monolithic microwave integrated circuit low-noise amplifier (LNA) operating between 26 and 29 GHz for 5G mobile communications. The self-biasing circuit, common-source topology with inductive source feedback, and RLC negative feedback loops between gate and drain of the third transistor were implemented to achieve low noise, good port match, high stability, high gain, and compact size. Measurement results show that the LNA has a high and flat gain of 30.5 ± 0.4 dB with noise figure (NF) of 1.65–1.8 dB across the band. The three-stage topology also achieves high linearity, providing the 1 dB compression point output power ( P 1dB ) of 21 dBm in the band. To our knowledge, this combination of NF, gain, and linearity performance represents the state of art of self-biased LNA in this frequency band.