材料科学
钝化
兴奋剂
锡
钙钛矿(结构)
能量转换效率
图层(电子)
开路电压
光伏系统
载流子寿命
纳米技术
化学工程
电压
光电子学
冶金
电气工程
硅
工程类
作者
Tianyue Wang,Hok‐Leung Loi,Qi Cao,Guitao Feng,Zhiqiang Guan,Qi Wei,Changsheng Chen,Mingjie Li,Ye Zhu,Chun‐Sing Lee,Feng Yan
标识
DOI:10.1002/adma.202402947
摘要
Tin (Sn) -based perovskite solar cells (PSCs) normally show low open circuit voltage due to serious carrier recombination in the devices, which can be attributed to the oxidation and the resultant high p-type doping of the perovskite active layers. Considering the grand challenge to completely prohibit the oxidation of Sn-based perovskites, a feasible way to improve the device performance is to counter-dope the oxidized Sn-based perovskites by replacing Sn
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