Halogenated Hole Selective Contact Enhances Interfacial Weak Bonding of Perovskite Solar Cells

Abstract Weak bonding between the perovskite and charge transport layers can lead to interfacial defects, hindering charge transfer and limiting the efficiency and stability of perovskite solar cells (PSCs). To address this issue, two halogenated spiro[fluorene‐9,9′‐xanthene]‐based molecules (SFX‐DM‐F and SFX‐DM‐Cl) are designed as an interfacial layer between perovskite and hole transport materials (HTMs). Both first‐principles simulations and experimental results are used to demonstrate that these halogenated interfacial layers improve the contact stability between perovskite's Pb(II) and HTMs, increasing the efficiency of charge transfer. The similar structure of interlayer to HTM also enhances the interfacial hole transfer integral, favoring effective hole transport. The PSCs based on SFX‐DM‐Cl achieve power conversion efficiencies of 24.8% (0.0625 cm 2 ) and 23.1% (1 cm 2 ). Even after 2000 h at a relative humidity of 15–20%, the unencapsulated PSC retains 94% of its initial efficiency. This work proposes the halogenated homologous HTMs as interfacial molecular bridges to optimize weak chemical bonds and hole transfer, thereby enabling efficient and stable PSCs.