硒化铜铟镓太阳电池
薄膜太阳能电池
材料科学
光伏系统
光电子学
薄膜
太阳能电池
纳米技术
工程类
电气工程
作者
Essaadia Oublal,Mohamed Al-Hattab,Abdelaziz Ait Abdelkadir,Mustapha Sahal,Naveen Kumar
标识
DOI:10.1016/j.mseb.2024.117401
摘要
Solar cells based on CIGS have outperformed many thin film solar cells using other absorbers. A prospective CIGS active layer-based SC with an ITO/CdS/CIGS/CNGS hetero-structure, with a CdS buffer layer, ITO window layer, and CNGS in dual role: as extra absorber layer, and Back Surface Field (BSF) was suggested in this article. Through the utilization of the unidimensionnal simulation program (SCAPS-1D), the impacts of the absorbers densities of doping and thicknesses, interfacial defects, parasitic resistances, and working temperature on the device have been thoroughly examined. By exploring simulation results, excellent PV metrics, including 1.21 V, 32.25 mA/cm2, 75.08 %, and 29.39 % for Voc,Jsc,FF,andPCE are provided. The suggested hetero-structure based on CIGS, when simulated, offers a useful technique to create new solar cells with more performance than previously published devices.
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