铁磁性
凝聚态物理
材料科学
磁电阻
居里温度
范德瓦尔斯力
密度泛函理论
磁性
拓扑绝缘体
自旋电子学
磁场
物理
分子
量子力学
作者
Meri Algarni,Hongwei Zhang,Guolin Zheng,Jianhui Zhou,Cheng Tan,Sultan Albarakati,James Partridge,Edwin Mayes,Lawrence Farrar,Yuyan Han,Min Wu,Xiangde Zhu,Jin Tang,Wensen Wei,Wenshuai Gao,Wei Ning,Mingliang Tian,Lan Wang
摘要
Layered chiral magnets with broken spatial inversion symmetry (SIS) enable chiral spin textures to occur in atomically thin layers. However, most layered materials retain SIS during their crystallization. Here, we demonstrate that SIS can be broken in a layered transition metal dichalcogenide TaS2 by intercalating Mn atoms. A chiral magnetic phase in Mn1/3TaS2 has, thus, been realized. This phase enables a nonzero Dzyaloshinskii–Moriya interaction, which in turn gives rise to large topological Hall effects (THEs) below 50 K. Both the ferromagnetism and THE can be tuned at low temperatures by modulating the carrier density via a protonic gate. Measured at 20 K with Vg = −4.7 V applied to the gate and electron doping density of 1.7 × 1022 cm−3, the maximum THE was almost double that recorded with no gate voltage applied. By further reducing the sample thicknesses, both the Curie temperature Tc and the longitudinal magnetoresistance can be significantly modulated. This is consistent with the theory of critical behavior. Our work highlights the ability to control both magnetism and chiral spin textures in Mn1/3TaS2 nanoflakes. Applying this discovery may lead to a variety of practical van der Waals heterostructure devices.
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