等效串联电阻
算法
拓扑(电路)
计算机科学
材料科学
电气工程
电压
工程类
作者
Srikant Kumar Mohanty,Poshan Kumar Reddy,Om Kumar Prasad,Chien‐Hung Wu,Kow‐Ming Chang,Jia-Chuan Lin
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2021-11-02
卷期号:42 (12): 1770-1773
被引量:12
标识
DOI:10.1109/led.2021.3125151
摘要
Gradual conduction tuning with a large memory window is essential for realizing multilevel switching memristive devices. In this work, we demonstrated 3-bit per cell storage capability with excellent endurance and retention behavior of AlN/AlO memristor via interface engineering. By incorporating an ultra-thin 2 nm Al 2 O 3 interface layer, seven distinct high resistance states with same low resistance state were achieved by controlling reset-stop voltage. In addition, by varying set compliance current, six resistance states with reliability and reproducibility were illustrated. The maximum cycle-to-cycle variability $\sigma /\mu $ (standard deviation/mean) of any resistance state was 28.7% in reset-stop voltage control methods. The multilevel switching characteristics could be attributed to (a) enhancement of on-off ratio resulted due to insertion of Al 2 O 3 barrier layer acts as series resistance (b) the gradual electron detrapping from occupied trap sites resulting in multiple intermediate resistance states during reset.
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